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| Advance Product Information September 15, 2004 35 GHz 5-Bit Phase Shifter * * * * * * * * TGP2102-EPU Key Features and Performance Frequency Range: 32 - 37 GHz 7dB Nominal Insertion Loss 3.5deg RMS Phase Error @ 35GHz 0.4dB RMS Amp. Error @ 35GHz Negative Control Voltage Single-Ended Logic 0.25m pHEMT 3MI Technology Chip dimensions: 1.88 x 0.75 x 0.1 mm (0.074 x 0.030 x 0.004 inches) Primary Applications * * Military Radar Transmit / Receive Preliminary Measured Performance Description RMS Phase Shift Error (deg) 8 7 6 5 4 3 2 1 0 31 20 15 31GHz 33GHz 35GHz 37GHz 32 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 The 5-bit design utilizes a compact topology that achieves a 1.41mm2 die area and high performance. The TGP2102-EPU provides a 5-bit digital phase shift function with a nominal 7dB insertion loss and 5 RMS phase shift error over a bandwidth of 32-37GHz. The TGP2102-EPU requires a minimum of off-chip components and operates with a -5V control voltage. Each device is RF tested on-wafer to ensure performance compliance. The device is available in chip form. 33 34 35 Frequency (GHz) 36 37 Phase Error (deg) 10 5 0 -5 32GHz 34GHz 36GHz -10 -15 -20 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 State Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 1 RMS Amplitude Error (dB) The TriQuint TGP2102-EPU is a 5-bit digital phase shifter MMIC design using TriQuint's proven 0.25m power pHEMT process to support a variety of Ka-Band phased array applications including military radar. 10 9 RMS Phase Shift Error RMS Amplitude Error 2 1.8 Advance Product Information September 15, 2004 TGP2102-EPU TABLE I MAXIMUM RATINGS Symbol VC ID PIN PD TCH TM TSTG 1/ 2/ 3/ Parameter Control Voltage Range Control Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature Value -8V to 0V 1 mA 20 dBm 0.1 W 150 C 320 0C -65 to 150 0C 0 Notes 1/ 2/ 1/ 2/ 1/ 2/ 1/ 2/ 3/ These ratings represent the maximum operable values for this device Combinations of supply voltage, supply current, input power, and output power shall not exceed PD at a package base temperature of 70C Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TABLE II RF CHARACTERIZATION TABLE (TA = 25C, Nominal) (VC = -5V) Parameter Insertion Loss Peak Amplitude Error RMS Amplitude Error Peak Phase Shift Error RMS Phase Shift Error Input Return Loss Output Return Loss Test Conditions 32 - 37GHz 32 - 37GHz 32 - 37GHz 32 - 37GHz 32 - 37GHz 32 - 37GHz 32 - 37GHz Typ 7 1 0.7 5 4 14 7 Units dB dB dB deg deg dB dB Notes Note: Table II Lists the RF Characteristics of typical devices as determined by fixtured measurements. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 2 Advance Product Information September 15, 2004 TGP2102-EPU Preliminary Measured Data -3 -4 -5 -6 S21 (dB) -7 -8 -9 -10 -11 -12 -13 31 10 9 RMS Phase Shift Error (deg) 8 7 6 5 4 3 2 1 0 31 32 33 34 35 Frequency (GHz) 36 37 RMS Phase Shift Error RMS Amplitude Error 32 33 34 Frequency (GHz) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 RMS Amplitude Error (dB) 3 35 36 37 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com Advance Product Information September 15, 2004 TGP2102-EPU Preliminary Measured Data 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 31 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 31 32 33 34 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 4 S11 (dB) 32 33 34 Frequency (GHz) 35 36 37 S22 (dB) 35 36 37 TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com Advance Product Information September 15, 2004 TGP2102-EPU Preliminary Measured Data 20 15 Phase Error (deg) 10 5 0 -5 31GHz 33GHz 35GHz 37GHz 32GHz 34GHz 36GHz -10 -15 -20 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 State 5 4 3 2 1 0 -1 -2 -3 -4 -5 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 State 31GHz 33GHz 35GHz 37GHz 32GHz 34GHz 36GHz Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. Amplitude Error (dB) TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 5 Advance Product Information September 15, 2004 TGP2102-EPU State Table State 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 V-Supply -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V V-11.25 0V -5V 0V -5V 0V -5V 0V -5V 0V -5V 0V -5V 0V -5V 0V -5V 0V -5V 0V -5V 0V -5V 0V -5V 0V -5V 0V -5V 0V -5V 0V -5V V-22.5 0V 0V -5V -5V 0V 0V -5V -5V 0V 0V -5V -5V 0V 0V -5V -5V 0V 0V -5V -5V 0V 0V -5V -5V 0V 0V -5V -5V 0V 0V -5V -5V V-45 0V 0V 0V 0V -5V -5V -5V -5V 0V 0V 0V 0V -5V -5V -5V -5V 0V 0V 0V 0V -5V -5V -5V -5V 0V 0V 0V 0V -5V -5V -5V -5V V-90 0V 0V 0V 0V 0V 0V 0V 0V -5V -5V -5V -5V -5V -5V -5V -5V 0V 0V 0V 0V 0V 0V 0V 0V -5V -5V -5V -5V -5V -5V -5V -5V V-180 0V 0V 0V 0V 0V 0V 0V 0V 0V 0V 0V 0V 0V 0V 0V 0V -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V -5V Phase Shift Reference 11.25 22.5 33.75 45 56.25 67.5 78.75 90 101.25 112.5 123.75 135 146.25 157.5 168.75 180 191.25 202.5 213.75 225 236.25 247.5 258.75 270 281.25 292.5 303.75 315 326.25 337.5 348.75 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 6 Advance Product Information September 15, 2004 TGP2102-EPU Mechanical Drawing Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 7 Advance Product Information September 15, 2004 TGP2102-EPU Chip Assembly & Bonding Diagram GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 8 Advance Product Information September 15, 2004 TGP2102-EPU Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C. (30 seconds maximum) An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 200C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com 9 |
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